KUALA LUMPUR, Sept 26 (Bernama) -- Toshiba Electronic Devices & Storage Corporation (Toshiba) has added the “TRSxxx120Hx Series” of 1200 volt (V) products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, electric vehicle (EV) charging stations and switching power supplies.
Toshiba in a statement said it has started shipments of the 10 new products in the series, five in a TO-247-2L package and five in a TO-247 package.
The new TRSxxx120Hx Series are 1200V products that use the improved junction-barrier Schottky (JBS) structure of Toshiba’s third-generation 650V SiC SBD.
Use of a new metal in the junction barrier allows the new products to achieve industry-leading low forward voltage, low total capacitive charge and low reverse current, significantly reducing equipment power loss in more high power applications.
The company will continue to expand its SiC power device lineup, and focus on improving efficiency that reduces power loss in industrial power equipment.
A supplier of advanced semiconductor and storage solutions, Toshiba draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system large-scale integrations (LSIs) and hard disk drive (HDD) products.
-- BERNAMA
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