TOSHIBA RELEASES 650V 3RD GENERATION SIC MOSFETS IN DFN8X8 PACKAGE

KAWASAKI, Japan, May 20 (Bernama) -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest[1] 3rd generation SiC MOSFET chips and housed in a compact DFN8x8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the four devices, “TW031V65C,” “TW054V65C,” “TW092V65C,” and “TW123V65C,” start today.

The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8x8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO-247-4L(X) and improves equipment power density. Surface mounting also allows use of parasitic impedance[2] components smaller than those of lead-inserted packages, reducing switching losses. DFN8x8 is a 4-pin[3] package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55% and turn-off loss by approximately 25%[4] compared to current Toshiba products[5], helping to reduce power loss in equipment.